Design Files
2 design files
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Models
A2T18S166W12S S-Parameters
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Printed Circuit Boards and Schematics
A2T18S166W12S 1800 MHz PCB DXF file
1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor
A2T18S166W12S Receive alerts
The A2T18S166W12S 38 W RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1995 MHz.
RF_ISO_NI780S_2L2L graphic image
Product Details
Features
- Designed for wide instantaneous bandwidth applications
- Greater negative gate-source voltage range for improved Class C operation
- Able to withstand extremely high output VSWR and broadband operating conditions
- Optimized for Doherty applications
- RoHS compliant
RF Performance Tables
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 18.0 | 35.3 | 6.9 | –34.5 | –18 |
| 1840 MHz | 18.1 | 34.4 | 6.8 | –34.7 | –19 |
| 1880 MHz | 17.6 | 34.2 | 6.7 | –34.3 | –12 |
1900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1930 MHz | 17.8 | 31.2 | 6.8 | –34.6 | –16 |
| 1960 MHz | 18.3 | 31.7 | 6.8 | –34.4 | –22 |
| 1995 MHz | 18.6 | 32.8 | 6.8 | –34.0 | –14 |
Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00517D, NI-780S-2L2L, 20.57x9.78x3.81, Pitch 24.28, 5 Pins