1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor

A2T18S166W12S

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Product Details

Features

  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1995
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Tables

1800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz18.035.36.9–34.5–18
1840 MHz18.134.46.8–34.7–19
1880 MHz17.634.26.7–34.3–12

1900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 800 mA, Pout = 38 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1930 MHz17.831.26.8–34.6–16
1960 MHz18.331.76.8–34.4–22
1995 MHz18.632.86.8–34.0–14

Documentation

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5 documents

Design Resources

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Design Files

2 design files

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