1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MD7P19130H

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Product Details

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Features

  • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 20 dB
    Drain Efficiency: 30%
    Device Output Signal PAR:  6 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –36 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power
  • Pout @ 1 dB Compression Point 130 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

Design Resources

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Documentation

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3 documents

Design Files

1 design file

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