2110-2170 MHz, 11.5 W Avg., 28 V, 2 x W-CDMA, Lateral N-Channel RF Power MOSFETs

MRF6S21050L
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Features

  • Typical 2–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 11.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 16 dB
    Drain Efficiency: 27.7%
    IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –40 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

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Design Files

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