2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs

MRF6S21100H
  • Not Recommended for New Designs
  • This page contains information on a product that is not recommended for new designs.

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Features

  • Typical 2–Carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 15.9 dB
    Drain Efficiency: 27.6%
    IM3 @ 10 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
    ACPR @ 5 MHz Offset: –39.5 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

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Design Files

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