3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160

RDGD31603PHSEVM

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RDGD31603PHSEVM is a three phase reference design and evaluation kit populated with six GD3160 gate drive for IGBT/SiC MOSFET devices. The kit includes the Freedom KL25Z microcontroller hardware for interfacing with a PC. The Flex GUI software needs to be installed on the PC, which communicates with the GD3160 via SPI registers, either in daisy chain or standalone configuration. This kit allows the user to configure devices without any software development and conduct SC or double pulse on a single phase.

The RDGD31603PHSEVM is also compatible with NXP MPC5775B/E-EVB (not included), allowing full motor control using our software examples. The evaluation kit is designed to connect to a compatible footprint of VE-Trac SiC OnSemi module (not included) or any other module with the same pinout.

Block Diagram

GD3160 Block Diagram

GD3160 Block Diagram
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Supported Devices

Processors and Microcontrollers

Ultra-Reliable MPC57xx MCUs

  • MPC5777C: Ultra-Reliable MPC5777C MCU for Automotive and Industrial Engine Management

Powertrain and Engine Control

  • GD3160: Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs

Power Management

12 V, 24 V, and 48 V SBC Solutions

  • FS6500: Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver

Interfaces

3.3 V / 5 V IO CAN Transceivers

  • TJA1042: High-Speed CAN Transceiver with Standby Mode

Features

Gate Driver

  • Integrated Galvanic signal isolation (up to 8 kV)
  • High gate current integrated: 15 A source/sink capable
  • SPI interface for safety monitoring, configuration, and diagnostic reporting
  • Fail-safe state management from LV and HV domain for user-selectable safe state
  • Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
  • Configurable desaturation and current sense optimized for protecting SiC and IGBTs
  • Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
  • Integrated ADC for monitoring parameters from HV domain
  • CMTI > 100 V/ns
  • Available in 5.0 or 3.3 V logic interface variants
  • Certified compliant with ISO 26262, supporting ASIL D level functional safety

GD3160

  • Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

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3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160.

    $483.00 USD
    In Stock :8

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