NXH5104UK: 4 Mbit Serial SPI EEPROM

Overview

The NXP NXH5104 is a 4 Mbit serial electrically erasable and programmable read-only memory (EEPROM). It provides byte level and page level serial EEPROM functions, sector level protection and power-down functions. The device has been developed for low-power low-voltage applications and is provided with a Serial Peripheral Interface (SPI) compatible interface.

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Features

Compact Wafer Level Chip Scale Package (WLCSP) package
- 7.8 mm², 380 µm thick
- 13 bumps with 400 µm pitch
Integrated Power Management Unit (PMU)
- V_DD supply range 1.0 V to 2.0 V
- V_DD(IO) supply range: V_DD to 2.6 V
- Direct operation from ZnAir, NiMH, Silver-Zinc batteries
- Active peak current limiting
Low current consumption
- Average power down current < 5 µA
- Average read current 0.6 mA (V_DD = V_DD(IO) = 1.8 V, F_SPI = 5 MHz)
- Average write current 0.7 mA (V_DD = V_DD(IO) = 1.8 V, F_SPI = 5 MHz)
Low-power CMOS technology
Auxiliary supply voltage enabling direct LED drive
Self-timed program cycle
- 256 byte page write buffer
- Partial page write allowed
Write Protect
- Quarter, half or entire memory array
Serial Peripheral Interface (SPI)
- Speed up to 5 MHz for 1.2 V signaling level
- Speed up to 10 MHz for 1.8 V signaling level
- SPI Mode 0 (0,0) and 3 (1,1) support
- SPI 3-wire support for SPI mode 0
Fixed High Supply mode for faster start-up
Space-saving 2.80 mm x 2.74 mm Wafer Level Chip Scale Package (WLCSP)
Highly integrated: 1 external cap
High Reliability
- 10-year data retention
- 500000 program cycles
- Wear-out management
Operating temperature -20 °C to +85 °C
Support for different supply configurations
Device ID and Unique ID
Pb-free and RoHS compliant

MoreLess

Features

Compact Wafer Level Chip Scale Package (WLCSP) package
- 7.8 mm², 380 µm thick
- 13 bumps with 400 µm pitch
Integrated Power Management Unit (PMU)
- V_DD supply range 1.0 V to 2.0 V
- V_DD(IO) supply range: V_DD to 2.6 V
- Direct operation from ZnAir, NiMH, Silver-Zinc batteries
- Active peak current limiting
Low current consumption
- Average power down current < 5 µA
- Average read current 0.6 mA (V_DD = V_DD(IO) = 1.8 V, F_SPI = 5 MHz)
- Average write current 0.7 mA (V_DD = V_DD(IO) = 1.8 V, F_SPI = 5 MHz)
Low-power CMOS technology
Auxiliary supply voltage enabling direct LED drive
Self-timed program cycle
- 256 byte page write buffer
- Partial page write allowed
Write Protect
- Quarter, half or entire memory array
Serial Peripheral Interface (SPI)
- Speed up to 5 MHz for 1.2 V signaling level
- Speed up to 10 MHz for 1.8 V signaling level
- SPI Mode 0 (0,0) and 3 (1,1) support
- SPI 3-wire support for SPI mode 0
Fixed High Supply mode for faster start-up
Space-saving 2.80 mm x 2.74 mm Wafer Level Chip Scale Package (WLCSP)
Highly integrated: 1 external cap
High Reliability
- 10-year data retention
- 500000 program cycles
- Wear-out management
Operating temperature -20 °C to +85 °C
Support for different supply configurations
Device ID and Unique ID
Pb-free and RoHS compliant