GD3160: Advanced Single-Channel High-Voltage Isolated Automotive Gate Driver for SiC MOSFETs/IGBTs
Overview
Features
Features
Operation
- ±15 A split output gate current drive
- Programmable HV VCC regulator output: 14 V to 21 V, 1 V step
- Max VCC output voltage: 23 V
Protection
- Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
- Faster VCE DeSat detection and reaction time: < 1.2 µs (SiC)
- Improved PWM deadtime range for reduced switching losses (SiC)
- Programmable two-level turn off (2LTO) and soft-shutdown (SSD)
Functional Safety
- Additional programmable fault pin (INTA)
- Integrated HV fault management (FSISO)
- Programmable VCE output monitoring
Insulation/Isolation
- Minimum common mode transient immunity (CMTI) > 100 V/ns
- 5,000 Vrms galvanic isolation per UL1577 (planned)
GD3160 Block Diagram
GD3160 Chipshot
What is SiC?
NXP Isolated Gate Driver Features & Benefits
Introduction to the FRDMGD3160HBIEVM
High Voltage Gate Driver Demo Using Half-Bridge EVM
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GD3160 Block Diagram
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GD3160 Chipshot
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What is SiC? -
NXP Isolated Gate Driver Features & Benefits -
Introduction to the FRDMGD3160HBIEVM -
High Voltage Gate Driver Demo Using Half-Bridge EVM
GD3160 Block Diagram
GD3160 Chipshot
Development Boards and Designs
Development Boards and Designs
FRDMGD3160HBIEVM:GD3160 HP Drive Half-Bridge Evaluation Kit 
FRDMGD3160DSBHB:GD3160 Half-Bridge Evaluation Kit
ICP2.0 IGBT EV Power Inverter Control Platform
FRDMGD3160XM3EVM:GD3160 XM3 Half-Bridge Evaluation Kit
SiC EV Power Inverter Control Reference Platform
RDGD31603PSMKEVM:3 Phase Inverter Evaluation Kit for eMPack Featuring GD3160
RDGD31603PHSEVM:3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160
RDGD3160I3PH5EVB:3 Phase Reference Design for HP Drive Featuring GD3160.