For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

The A2V07H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz.

See product image

Data Sheet

Application Notes

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Tables

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 0.5 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
595 MHz	17.8	54.7	6.8	–27.5
623 MHz	17.5	56.9	7.2	–29.2
652 MHz	17.3	53.4	6.8	–27.2

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 1.25 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
758 MHz	18.4	53.0	7.1	–31.1
780 MHz	18.3	54.1	7.1	–31.1
803 MHz	17.5	54.1	6.7	–30.6

Buy/Parametrics

‌ ‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌	‌ ‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌
‌ ‌ ‌	‌	‌	‌	‌	‌

Documentation

Quick reference to our documentation types

4 documents

Compact List

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

PDFMay 13, 2009Rev 3

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet[A2V07H525-04N]

PDFJul 20, 2017Rev 0

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

PDFFeb 15, 2016Rev C

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

Quick reference to our design files types.

2 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Printed Circuit Boards and Schematics
A2V07H525-04N 780 MHz PCB DXF file

ZIPRev 1Jul 22, 2017 00:00:0052.35 KBA2V07H525-04N-780-PCB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
Printed Circuit Boards and Schematics
A2V07H525-04N 600 MHz PCB DXF file

ZIPRev 1Jul 22, 2017 00:00:00235.00 KBA2V07H525-04N-600-PCB

Account Required
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

595-851 MHz, 120 W Avg., 48 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

600 MHz

780 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet[A2V07H525-04N]

Package Information (1)

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

A2V07H525-04N 780 MHz PCB DXF file

A2V07H525-04N 600 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

600 MHz

780 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages[AN1907]

Data Sheet (1)

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet[A2V07H525-04N]

Package Information (1)

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2V07H525-04N 595-851 MHz, 120 W Avg, 48 V Data Sheet

AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

A2V07H525-04N 780 MHz PCB DXF file

A2V07H525-04N 600 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

595-851 MHz, 120 W Avg., 48 V Airfast^® RF Power LDMOS Transistor