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The A2T08VD020NT1 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.

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Data Sheet

Application Notes

Product Details

Features

Greater Negative Gate-Source Voltage Range for Improved Class C Operation
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
RoHS Compliant

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = I_DQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	ACPR (dBc)
920 MHz	19.3	21.3	–43.4
940 MHz	19.3	21.5	–43.8
960 MHz	19.1	21.1	–43.9

700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = I_DQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	ACPR (dBc)
728 MHz	19.2	18.9	–42.3
748 MHz	19.2	19.2	–42.6
768 MHz	18.9	18.7	–42.6

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Documentation

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3 documents

Compact List

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

PDFJul 11, 2024Rev 2

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet[A2T08VD020N]

PDFMay 18, 2022Rev 2

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins[SOT1664-1]

PDFMar 21, 2016Rev B

Design Resources

Design Files

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3 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Printed Circuit Boards and Schematics
A2T08VD020N 700 MHz PCB DXF file

ZIPRev 3Jan 15, 2016 00:00:0048.78 KBA2T08VD020N_700_PCB

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Printed Circuit Boards and Schematics
A2T08VD020N 900 MHz PCB DXF file

ZIPRev 5Feb 4, 2016 00:00:0054.95 KBA2T08VD020N_900_PCB

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Calculators
A2T08VD020N RF Power Electromigration MTTF Calculation Program

XLSXRev 0Aug 23, 2016 00:00:0035.26 KBA2T08VD020N_MTTF_CALC

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728-960 MHz, 2 W Avg., 48 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

900 MHz

700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Data Sheet (1)

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet[A2T08VD020N]

Package Information (1)

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins[SOT1664-1]

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

Design Resources

Design Files

Filter by

A2T08VD020N 700 MHz PCB DXF file

A2T08VD020N 900 MHz PCB DXF file

A2T08VD020N RF Power Electromigration MTTF Calculation Program

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Support

What do you need help with?

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728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

900 MHz

700 MHz

Buy/Parametrics

Documentation

Filter by

Application Note (1)

Thermal Characterization Methodology of RF Power Amplifiers - Application Note[AN1955]

Data Sheet (1)

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet[A2T08VD020N]

Package Information (1)

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins[SOT1664-1]

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins

Design Resources

Design Files

Filter by

A2T08VD020N 700 MHz PCB DXF file

A2T08VD020N 900 MHz PCB DXF file

A2T08VD020N RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

728-960 MHz, 2 W Avg., 48 V Airfast^® RF Power LDMOS Transistor