A2V09H525-04N|720-960 MHz, 120 W Avg, 48 V

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The A2V09H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Data Sheet

Product Details

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

RF Performance Tables

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 688 mA, V_GSB = 1.1 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
920 MHz	18.9	57.8	7.5	–28.9
940 MHz	18.9	56.7	7.3	–32.4
960 MHz	18.7	54.8	6.9	–34.8

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 700 mA, V_GSB = 0.9 Vdc, P_out = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
758 MHz	18.1	56.2	7.5	–28.2
780 MHz	18.1	54.7	7.5	–29.3
803 MHz	17.7	52.5	7.2	–32.5

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Documentation

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3 documents

Compact List

A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet[A2V09H525-04N]

PDFMar 10, 2017Rev 0

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

PDFFeb 15, 2016Rev C

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

PDFJan 19, 2004Rev 0

Design Resources

Design Files

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5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A2V09H525-04N S-Parameters Peaking Class C

S2PRev 0Mar 10, 2017 00:00:0034.5 KBA2V09H525-04N-PEAKING-CLASS-C

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Models
A2V09H525-04N S-Parameters Peaking Class AB

S2PRev 0Mar 10, 2017 00:00:0034.4 KBA2V09H525-04N-PEAKING-CLASS-AB

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Models
A2V09H525-04N S-Parameters Carrier

S2PRev 0Mar 10, 2017 00:00:0034.4 KBA2V09H525-04N-CARRIER

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Printed Circuit Boards and Schematics
A2V09H525-04N 900 MHz PCB DXF file

ZIPRev 1Mar 10, 2017 00:00:0073.3 KBA2V09H525-04N-900-PCB

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Printed Circuit Boards and Schematics
A2V09H400-04N 780 MHz PCB DXF file

ZIPRev 0Mar 10, 2017 00:00:0079.3 KBA2V09H525-04N-780-PCB

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720-960 MHz, 120 W Avg., 48 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

900 MHz

780 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet[A2V09H525-04N]

Package Information (1)

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

A2V09H525-04N S-Parameters Peaking Class C

A2V09H525-04N S-Parameters Peaking Class AB

A2V09H525-04N S-Parameters Carrier

A2V09H525-04N 900 MHz PCB DXF file

A2V09H400-04N 780 MHz PCB DXF file

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Support

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Suggested Links

720-960 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Product Details

Features

RF Performance Tables

900 MHz

780 MHz

Buy/Parametrics

Documentation

Filter by

Data Sheet (1)

A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet[A2V09H525-04N]

Package Information (1)

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins[SOT1816-1]

Technical Notes (1)

Using Data Sheet Impedances for RF LDMOS Devices[EB212]

A2V09H525-04N 720-960 MHz, 120 W Avg, 48 V Data Sheet

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins

Design Resources

Design Files

Filter by

A2V09H525-04N S-Parameters Peaking Class C

A2V09H525-04N S-Parameters Peaking Class AB

A2V09H525-04N S-Parameters Carrier

A2V09H525-04N 900 MHz PCB DXF file

A2V09H400-04N 780 MHz PCB DXF file

Filter By

Support

What do you need help with?

Suggested Links

720-960 MHz, 120 W Avg., 48 V Airfast^® RF Power LDMOS Transistor