A3V07H600-42N 616-870 MHz, 112 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A3V07H600-42N
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This A3V07H600-42N 112 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 616 to 870 MHz.

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

717-768 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 900 mA, VGSB = VGSC = 1.0 Vdc(1), Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(2)

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
717 MHz16.952.88.0–30.7
742 MHz17.051.38.1–32.0
768 MHz17.151.87.7–32.4

616-870 MHz(3)

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 900 mA, VGSB = VGSC = 1.1 Vdc(1), Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
616 MHz18.245.47.7–32.4
632 MHz18.547.17.7–31.9
650 MHz18.747.77.8–31.0
717 MHz19.144.48.3–36.2
732 MHz19.143.48.5–38.3
750 MHz19.242.98.5–39.5
840 MHz19.144.98.1–33.3
850 MHz18.743.98.1–32.7
860 MHz18.442.88.0–32.6
870 MHz18.041.77.8–32.4

1. VGSB = VGSC = peaking bias voltage.
2. All data measured in fixture with device soldered to heatsink.
3. Fixture designed with a wideband match.

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N true 0 PSPA3V07H600-42Nen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 0 English A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1597079494617719521806 PSP 367.7 KB None None documents None 1597079494617719521806 /docs/en/data-sheet/A3V07H600-42N.pdf 367735 /docs/en/data-sheet/A3V07H600-42N.pdf A3V07H600-42N documents N N 2020-08-10 A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3V07H600-42N.pdf /docs/en/data-sheet/A3V07H600-42N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Aug 6, 2020 980000996212993340 Data Sheet Y N A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet Application Note Application Note 1 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Package Information Package Information 1 3 A English 1597057737225741462537 PSP 175.3 KB None None documents None 1597057737225741462537 /docs/en/package-information/SOT2025-1.pdf 175282 /docs/en/package-information/SOT2025-1.pdf sot2025-1 documents N N 2020-08-10 98ASA01453D /docs/en/package-information/SOT2025-1.pdf /docs/en/package-information/SOT2025-1.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jul 12, 2020 302435339416912908 Package Information Y N 98ASA01453D false 0 A3V07H600-42N downloads en true 1 Y PSP Application Note 1 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A3V07H600-42N.pdf 2020-08-10 1597079494617719521806 PSP 1 Aug 6, 2020 Data Sheet A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A3V07H600-42N.pdf English documents 367735 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3V07H600-42N.pdf A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3V07H600-42N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3V07H600-42N 616-870 MHz, 112 W Avg, 48 V Data Sheet 367.7 KB A3V07H600-42N N 1597079494617719521806 Package Information 1 /docs/en/package-information/SOT2025-1.pdf 2020-08-10 1597057737225741462537 PSP 3 Jul 12, 2020 Package Information None /docs/en/package-information/SOT2025-1.pdf English documents 175282 None 302435339416912908 2022-12-07 N /docs/en/package-information/SOT2025-1.pdf 98ASA01453D /docs/en/package-information/SOT2025-1.pdf documents 302435339416912908 Package Information N en None Y pdf A N N 98ASA01453D 175.3 KB sot2025-1 N 1597057737225741462537 true Y Products

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