1800-2200 MHz, 6.3 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier

A3I20X050N

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Product Details

Features

  • Integrated Doherty splitter and combiner
  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1800
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    28
  • Peak Power (Typ) (dBm)
    48
  • Peak Power (Typ) (W)
    63
  • Die Technology
    LDMOS

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 28 Vdc, IDQ(Carrier) = 160 mA, VGS(Peaking) = 2.15 Vdc, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1805 MHz 28.7 38.1 –37.1
1840 MHz 28.7 39.1 –39.7
1880 MHz 28.7 39.0 –37.5

1800–2200 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ(Carrier) = 145 mA, VGS(Peaking) = 2.20 Vdc, Pout = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
PAE
(%)
ACPR
(dBc)
1800 MHz 28.3 37.3 –33.5
1900 MHz 28.4 38.0 –37.7
2000 MHz 28.7 37.6 –40.9
2100 MHz 29 38.0 –39.1
2200 MHz 29.0 37.6 –34.1
1. All data measured in fixture with device soldered to heatsink.

Documentation

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5 documents

Design Resources

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Design Files

3 design files

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