1930–1995 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

A5G19H605W19N

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

Part numbers include: A5G19H605W19N.

RF Performance Table

1900 MHz

Typical Doherty Single-Carrier W-CDMA Production Test Fixture Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)

Documentation

Quick reference to our documentation types.

3 documents

Design Resources

Design Files

4 design files

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