1930–1995 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

A5G19H605W19N Active

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This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1930 to 1995 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

RF Performance Table

1900 MHz

Typical Doherty Single-Carrier W-CDMA Production Test Fixture Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 85 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)

Frequency Gps (dB) ηD Output PAR (dB) ACPR (dBc)
1930 MHz 16.3 54.3 8.9 –29.2
1960 MHz 16.7 55.1 8.6 –30.2
1995 MHz 17.0 55.7 8.2 –31.2

1. All data measured with device soldered to NXP production test fixture.

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N true 0 PSPA5G19H605W19Nen 4 Application Note Application Note t789 2 Data Sheet Data Sheet t520 1 Fact Sheet Fact Sheet t523 1 en_US en_US en Data Sheet Data Sheet 1 1 1 English A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1711066073785726153904 PSP 496.7 KB None None documents None 1711066073785726153904 /docs/en/data-sheet/A5G19H605W19N.pdf 496695 /docs/en/data-sheet/A5G19H605W19N.pdf A5G19H605W19N documents N N 2024-03-21 A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G19H605W19N.pdf /docs/en/data-sheet/A5G19H605W19N.pdf Data Sheet N 980000996212993340 2024-03-22 pdf N en Mar 20, 2024 980000996212993340 Data Sheet Y N A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet Application Note Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages Fact Sheet Fact Sheet 1 4 0 English NXP’s RF power macro GaN portfolio of high power RF transistors designed for Remote Radio Heads (RRH) in cellular base stations. 1715966462702716336843 PSP 1.4 MB None None documents None 1715966462702716336843 /docs/en/fact-sheet/MACROGANFS.pdf 1360062 /docs/en/fact-sheet/MACROGANFS.pdf MACROGANFS documents N N 2024-05-17 RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet /docs/en/fact-sheet/MACROGANFS.pdf /docs/en/fact-sheet/MACROGANFS.pdf Fact Sheet N 736675474163315314 2024-05-17 pdf N en May 16, 2024 736675474163315314 Fact Sheet Y N RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet false 0 A5G19H605W19N downloads en true 1 Y PSP Application Note 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 3 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 Data Sheet 1 /docs/en/data-sheet/A5G19H605W19N.pdf 2024-03-21 1711066073785726153904 PSP 1 Mar 20, 2024 Data Sheet A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A5G19H605W19N.pdf English documents 496695 None 980000996212993340 2024-03-22 N /docs/en/data-sheet/A5G19H605W19N.pdf A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet /docs/en/data-sheet/A5G19H605W19N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A5G19H605W19N 1930–1995 MHz, 85 W Avg, 48 V Data Sheet 496.7 KB A5G19H605W19N N 1711066073785726153904 Fact Sheet 1 /docs/en/fact-sheet/MACROGANFS.pdf 2024-05-17 1715966462702716336843 PSP 4 May 16, 2024 Fact Sheet NXP’s RF power macro GaN portfolio of high power RF transistors designed for Remote Radio Heads (RRH) in cellular base stations. None /docs/en/fact-sheet/MACROGANFS.pdf English documents 1360062 None 736675474163315314 2024-05-17 N /docs/en/fact-sheet/MACROGANFS.pdf RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet /docs/en/fact-sheet/MACROGANFS.pdf documents 736675474163315314 Fact Sheet N en None Y pdf 0 N N RF High Power GaN Solutions for 5G Infrastructure - Fact Sheet 1.4 MB MACROGANFS N 1715966462702716336843 true Y Products

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