Design Files
2 design files
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Printed Circuit Boards and Schematics
A2V07H525-04N 780 MHz PCB DXF file
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Printed Circuit Boards and Schematics
A2V07H525-04N 600 MHz PCB DXF file
595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor
A2V07H525-04N Receive alerts
The A2V07H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 595 to 851 MHz.
OM-1230-4L Package Image
Product Details
Features
- Advanced high performance in-package Doherty
- Greater negative gate-source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- RoHS compliant
RF Performance Tables
600 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.5 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 595 MHz | 17.8 | 54.7 | 6.8 | –27.5 |
| 623 MHz | 17.5 | 56.9 | 7.2 | –29.2 |
| 652 MHz | 17.3 | 53.4 | 6.8 | –27.2 |
780 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.25 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 758 MHz | 18.4 | 53.0 | 7.1 | –31.1 |
| 780 MHz | 18.3 | 54.1 | 7.1 | –31.1 |
| 803 MHz | 17.5 | 54.1 | 6.7 | –30.6 |
Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00506D, OM-1230-4L, 32.26x9.96x3.81, Pitch 13.72, 5 Pins