595-851 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V07H525-04N

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    595
  • Frequency (Max) (MHz)
    851
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    57.8
  • Peak Power (Typ) (W)
    602
  • Die Technology
    LDMOS

RF Performance Tables

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.5 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
595 MHz17.854.76.8–27.5
623 MHz17.556.97.2–29.2
652 MHz17.353.46.8–27.2

780 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.25 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
758 MHz18.453.07.1–31.1
780 MHz18.354.17.1–31.1
803 MHz17.554.16.7–30.6

Design Resources

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Documentation

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5 documents

Design Files

2 design files

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