716-960 MHz, 65 W Avg, 48 V Airfast® RF Power LDMOS Transistor

A2T09VD250N

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Product Details

Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant

Key Parametrics

  • Frequency (Min) (MHz)
    716
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    55.1
  • Peak Power (Typ) (W)
    326
  • Die Technology
    LDMOS

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ(A+B) = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
920 MHz22.534.87.5–34.4–18
940 MHz22.735.47.4–34.2–19
960 MHz22.435.47.2–34.3–12

800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ(A+B) = 1000 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
790 MHz23.037.37.4–33.0–15
806 MHz23.137.87.2–33.3–19
821 MHz22.837.07.0–33.8–13

Documentation

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3 documents

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Design Files

1 design file

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