717-850 MHz, 112 W Avg., 50 V Airfast® RF Power GaN Transistor

A5G07H800W19N

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Product Details

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Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in−package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

RF Performance Table

800 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
758 MHz 19.7 61.2 8.9 -26.5
803 MHz 19.3 60.0 9.1 -29.3
821 MHz 18.8 59.8 9.0 -30.0
1. All data measured in reference circuit with device soldered to heatsink.

Documentation

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3 documents

Design Resources

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Design Files

1 design file

  • Printed Circuit Boards and Schematics

    A5G07H800W19N 800 MHz PCB DXF file

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