Design Files
1 design file
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Printed Circuit Boards and Schematics
A5G07H800W19N 800 MHz PCB DXF file
717-850 MHz, 112 W Avg., 50 V Airfast® RF Power GaN Transistor
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This 112 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 717 to 850 MHz.
This part is characterized and performance is guaranteed for applications operating in the 717 to 850 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in−package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Plastic package
- RoHS compliant
RF Performance Table
800 MHz
Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency |
Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 758 MHz | 19.7 | 61.2 | 8.9 | -26.5 |
| 803 MHz | 19.3 | 60.0 | 9.1 | -29.3 |
| 821 MHz | 18.8 | 59.8 | 9.0 | -30.0 |