717-850 MHz, 112 W Avg., 50 V Airfast® RF Power GaN Transistor

A5G07H800W19N

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

Part numbers include: A5G07H800W19N.

RF Performance Table

800 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = –5.0 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc)
758 MHz 19.7 61.2 8.9 -26.5
803 MHz 19.3 60.0 9.1 -29.3
821 MHz 18.8 59.8 9.0 -30.0

Documentation

Quick reference to our documentation types.

4 documents

Design Resources

Design Files

1 design file

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