720-960 MHz, 120 W Avg., 48 V Airfast® RF Power LDMOS Transistor
The A2V09H525-04N 120 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
Product Details
Features
- Advanced high performance in-package Doherty
- Greater negative gate-source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- RoHS compliant
RF Performance Tables
900 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 688 mA, VGSB = 1.1 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 18.9 | 57.8 | 7.5 | –28.9 |
| 940 MHz | 18.9 | 56.7 | 7.3 | –32.4 |
| 960 MHz | 18.7 | 54.8 | 6.9 | –34.8 |
780 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 0.9 Vdc, Pout = 120 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 758 MHz | 18.1 | 56.2 | 7.5 | –28.2 |
| 780 MHz | 18.1 | 54.7 | 7.5 | –29.3 |
| 803 MHz | 17.7 | 52.5 | 7.2 | –32.5 |
Buy/Parametrics
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|