Design Files
2 design files
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Printed Circuit Boards and Schematics
A2V09H300-04N 900 MHz PCB DXF file
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Calculators
A2V09H300-04N RF Power Electromigration MTTF Calculation Program
720-960 MHz, 79 W Avg., 48 V Airfast® RF Power LDMOS Transistor
A2V09H300-04N Receive alerts
The A2V09H300-04NR3 79 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
OM-780-4L Package Image
Product Details
Features
- Advanced High Performance In-Package Doherty
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction System
- RoHS Compliant
RF Performance Tables
900 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.2 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 19.8 | 55.1 | 7.2 | –32.7 |
| 940 MHz | 19.7 | 55.9 | 7.1 | –33.4 |
| 960 MHz | 19.5 | 56.1 | 6.7 | –33.9 |
800 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.0 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 790 MHz | 18.4 | 55.0 | 7.6 | –25.0 |
| 806 MHz | 18.9 | 56.0 | 8.0 | –28.0 |
| 821 MHz | 18.1 | 56.1 | 8.0 | –32.0 |
Documentation
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