Documentation
Quick reference to our documentation types.
3 documents
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Package Information
98ASA10760D, PQFN-EP, 8.0x8.0x2.1, Pitch 0.8, 24 Pins
728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor
A2T08VD020N Receive alerts
The A2T08VD020NT1 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.
RF ISO PQFN8x8 1894 Plastic
Product Details
Features
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- On-Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Integrated ESD Protection
- RoHS Compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 728
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- Frequency (Max) (MHz)
- 960
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 43.4
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- Peak Power (Typ) (W)
- 21.9
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- Die Technology
- LDMOS
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 920 MHz | 19.3 | 21.3 | –43.4 |
| 940 MHz | 19.3 | 21.5 | –43.8 |
| 960 MHz | 19.1 | 21.1 | –43.9 |
700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 728 MHz | 19.2 | 18.9 | –42.3 |
| 748 MHz | 19.2 | 19.2 | –42.6 |
| 768 MHz | 18.9 | 18.7 | –42.6 |
Design Resources
Design Files
3 design files
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Printed Circuit Boards and Schematics
A2T08VD020N 700 MHz PCB DXF file
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Printed Circuit Boards and Schematics
A2T08VD020N 900 MHz PCB DXF file
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Calculators
A2T08VD020N RF Power Electromigration MTTF Calculation Program