728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2T08VD020N

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Product Details

Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant

Key Parametrics

  • Frequency (Min) (MHz)
    728
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    43.4
  • Peak Power (Typ) (W)
    21.9
  • Die Technology
    LDMOS

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Design Resources

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Documentation

Quick reference to our documentation types.

3 documents

Design Files

3 design files

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