865-960 MHz, 112 W Avg., 50 V Airfast® RF Power GaN Transistor

A5G08H800W19N

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Product Details

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Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Plastic package
  • RoHS compliant

RF Performance Table

900 MHz

Typical Doherty Single−Carrier W−CDMA Production Test Fixture Performance: VDD = 50 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc)
865 MHz 19.3 60.5 8.8 –28.0
913 MHz 19.5 59.9 8.6 –28.8
960 MHz 19.1 58.7 8.3 –30.5

Documentation

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3 documents

Design Resources

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Design Files

3 design files

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