A3V07H600-42N: A3V07H600-42N 616-870 MHz, 112 W Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

OM-1230-6L PLASTIC

OM-1230-6L PLASTIC

Key Parametrics

  • Frequency (Min) (MHz)
    616
  • Frequency (Max) (MHz)
    870
  • Supply Voltage (Typ) (V)
    48
  • P1dB (Typ) (dBm)
    59
  • P1dB (Typ) (W)
    794
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    112.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    16.9 @ 717
  • Efficiency (Typ) (%)
    49.5
  • Thermal Resistance (Spec) (℃/W)
    0.28
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    LDMOS
.

RF Performance Table

717-768 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 900 mA, VGSB = VGSC = 1.0 Vdc(1), Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(2)

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
717 MHz16.952.88.0–30.7
742 MHz17.051.38.1–32.0
768 MHz17.151.87.7–32.4

616-870 MHz(3)

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 900 mA, VGSB = VGSC = 1.1 Vdc(1), Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
616 MHz18.245.47.7–32.4
632 MHz18.547.17.7–31.9
650 MHz18.747.77.8–31.0
717 MHz19.144.48.3–36.2
732 MHz19.143.48.5–38.3
750 MHz19.242.98.5–39.5
840 MHz19.144.98.1–33.3
850 MHz18.743.98.1–32.7
860 MHz18.442.88.0–32.6
870 MHz18.041.77.8–32.4

1. VGSB = VGSC = peaking bias voltage.
2. All data measured in fixture with device soldered to heatsink.
3. Fixture designed with a wideband match.