Product Longevity
Participating products are available for a minimum of 10 years. Designated participating products developed for the automotive, telecom and medical segments are available for a minimum of 15 years.
Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs
GD3160 silicon and enablement (documentation, software and boards) are available for selected customers (NDA required). For additional information and sample availability contact support or your local sales representative.
The GD3160 is a galvanically isolated single-channel gate driver designed for driving and protecting SiC MOSFET and IGBT power modules in automotive traction inverter applications.
The GD3160 provides SPI-programmable gate drive control, protection features, diagnostics and fault reporting, enabling optimization of power device performance and system protection. Developed in compliance with ISO 26262, the GD3160 integrates functional safety features that support applications up to ASIL D.
Its high level of integration helps simplify inverter designs while supporting efficient and reliable xEV power conversion systems.
Product Details
Block Diagram
Features
Key Features
- HV isolated IGBT and SiC single gate driver IC device functions
- Load current(IL) 15 A (Typ)
- Single channel
- Drain-to-source on resistance 500 mOhm RDS(ON) (Typ)
- Load supply voltage min. -12 V, max. 25 V
- Supply voltage min. 4.5 V, max. 40 V
- Ambient operating temperature -40 to 125 °C
- PWM and SPI interface and input controllers
Operation
- ±15 A split output gate current drive
- Programmable HV VCC regulator output: 14 V to 21 V, 1 V step
- Max VCC output voltage: 23 V
Protection
- Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
- Faster VCE DeSat detection and reaction time: < 1.2 µs (SiC)
- Improved PWM deadtime range for reduced switching losses (SiC)
- Programmable two-level turn off (2LTO) and soft-shutdown (SSD)
Functional Safety
- Additional programmable fault pin (INTA)
- Integrated HV fault management (FSISO)
- Programmable VCE output monitoring
Insulation / Isolation
- Minimum common mode transient immunity (CMTI) > 100 V/ns
- 5,000 Vrms galvanic isolation per UL1577 (planned)
Product Programs
Related products
Advanced High Voltage Isolated Gate Driver for IGBT and SiC MOSFETs
MPC5775B and MPC5775E Microcontrollers for Battery Management Systems (BMS) and Inverter Applications
Grade 1 and Grade 0 Safety Power System Basis Chip with CAN Flexible Data Transceiver
Buy/Parametrics
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Documentation
Quick reference to our documentation types
4 documents
Compact List
Data Sheet (1)
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Advanced IGBT/SiC gate driver[GD3160-DS]
Fact Sheet (1)
User Manual (1)
White Paper (1)
Design Resources
Hardware
Quick reference to our
board types.
1-5 of 11 hardware offerings
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Complete Solution3 Phase Reference Design for HP Drive Featuring GD3160
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Complete SolutionEV Power Inverter Control Reference Platform Gen 2
Active -
Complete Solution3-Phase Reference Design for VE-Trac™ Drive SiC Module Featuring GD3160
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Additional hardware available. View our featured partner solutions.
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Evaluation and Development BoardsGD3160 Half-Bridge Evaluation Kit
Active -
Evaluation and Development BoardsHalf-Bridge Evaluation Board for P6 IGBT/SiC Modules Featuring the GD3160
Software
Quick reference to our software types.
2 software files
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Code Snippets
GD31xx Driver Example Codeupdated
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Debugging and Visualization Tools
FlexGUI: Software Tool for Evaluation of Reference Design Kits
Note: For better experience, software downloads are recommended on desktop.
Engineering Services
To get further assistance directly from NXP, please see our Engineering Services.
1 engineering service
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Independent Design House (IDH)
hardware design
To find additional partner offerings that support this product, visit our Partner Marketplace.