Six new transistors meet customers’ requirements for delivering high performance while reducing size, weight, and power consumption
SAN FRANCISCO, May 25, 2016 (GLOBE NEWSWIRE) -- NXP Semiconductors N.V. (NASDAQ:NXPI), today expanded its portfolio of broadband gallium nitride (GaN) RF power transistors ideal for electronic warfare and battlefield radio applications. The expansion includes six new driver or final-stage amplifiers that have frequency coverage as broad as 1 to 3000 MHz.
The new GaN on SiC transistors combine high power density, ruggedness, and very flat frequency response over wide bandwidths. All are input matched to optimize operating frequency range, and can withstand a VSWR greater than 20:1 with 3 dB overdrive without degradation. They are also part of NXP’s Product Longevity Program.
The transistors’ broadband frequency coverage from HF to S-band allows them to cover virtually all frequencies used by radios or the lower-frequency sections of electronic systems. This reduces the number of RF power transistors required to build an amplifier with a specific RF output level, which decreases amplifier size and bill of materials.
The new transistors include:
- MMRF5011N (28V) and MMRF5013N (50V): operate from 1 to 3000 MHz with RF output power up to 12 W CW, 15 dB gain, and 60% efficiency, housed in an OM-270-8 over-molded plastic package
- MMRF5015NR5: operates from 1 to 2700 MHz with RF output power up to 125 W CW, gain of 16 dB, and efficiency of 64%, housed in an OM-270-2 over-molded plastic package
- MMRF5019N: operates from 1 to 3000 MHz with RF output power up 25 W CW, gain of 18 dB, and efficiency of 40%, housed in an OM-270-8 over-molded plastic package
- MMRF5021H: operates from 1 to 2700 MHz with RF output power up to 250 W CW, 16 dB gain, and 58% efficiency, housed in a NI-780H-4L air-cavity ceramic package
- MMRF5023N: operates from 1 to 2700 MHz with RF output power up to 63 W CW, 16 dB gain, and 60% efficiency, housed in an OM-270-2 over-molded plastic package
“Our customers want to reduce the size, weight, and power of military systems even at the device level,” said Paul Hart, executive vice president and general manager of NXP’s RF Power business unit. “Our new GaN transistors meet these requirements and can provide improved ruggedness, broad operating bandwidth and high efficiency.”
The new transistors join NXP’s expanding portfolio of RF power transistors ideal for defense systems that operate in HF, VHF, UHF, and L-band radar, IFF transponders and avionics systems. In addition to GaN devices, NXP offers more than 40 LDMOS transistors covering 1 to 3000 MHz with RF output power up to 1500 W.
Availability and Showcase
NXP is showcasing the new transistors at the International Microwave Symposium, May 23-26, in San Francisco, CA, Booth 1839.
The six new GaN transistors are either sampling or in production. Application circuits are available that support CW operation in frequencies that are within the range of 30 to 2600 MHz. For pricing or additional information, please contact your local NXP sales office or NXP approved distributor.
For more information, visit www.nxp.com/RFmilitary.
About NXP Semiconductors
NXP Semiconductors N.V. (NASDAQ:NXPI) enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security & privacy and smart connected solutions markets. Built on more than 60 years of combined experience and expertise, the company has 45,000 employees in more than 35 countries and posted revenue of $6.1 billion in 2015. Find out more at www.nxp.com.
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These products are supported by NXP's Product Longevity Program. For terms and conditions and to obtain a list of available production products see http://www.nxp.com/productlongevity.
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