As wireless infrastructure evolves to support higher data rates and denser deployments, the need for compact,
efficient and high-performance solutions becomes paramount. NXP’s A5M20TG042 mid-power module is engineered to meet
these
demands
by offering a robust, space-saving solution for next-generation FDD and mMIMO systems.
Advanced Amplifier Architecture: 3-Stage Doherty Design + LDMOS and GaN
For 25 years, FDD has been known for its common usage in cellular networks because of its efficient and simultaneous
two-way communication between the user and base stations. Historically, FDD has been primarily utilized in Macro
technologies, but now NXP is improving its versatility by leveraging our A5M20TG042 amplifier in massive multiple input, multiple output
(mMIMO) applications.
At the heart of the A5M20TG042 is a 3-stage amplifier topology that combines a 2-stage laterally-diffused metal-oxide
semiconductor transistors (LDMOS) driver integrated circuit (IC) with a
gallium-nitride–based (GaN) Doherty final stage. This hybrid architecture enables:
- High linearity and power-added efficiency (PAE) across a wide dynamic range
- Peak-to-average power ratio (PAPR) handling, ideal for modern modulated signals such as long term evolution
(LTE) and 5G new radio (NR)
- Doherty configuration that dynamically adjusts load impedance to maintain efficiency at back-off power
levels—critical
for systems with high crest factor waveforms
The A5M20TG042 leverages LDMOS for its proven reliability in driver stages, while incorporating GaN in the final
stage
for its high electron mobility, enabling faster switching and higher frequency operation. Additionally, GaN offers
excellent thermal conductivity, allowing for higher power densities, and a high breakdown voltage that supports
robust
performance under high-voltage conditions. This combination ensures optimal performance across the 1800–2200 MHz
band,
delivering 49% efficiency at rated power and 42% efficiency across the lineup.
Ready to elevate your network’s performance? Unlock NXP’s next-gen module with A5M20TG042 today to
learn more.
System Integration Made Simple
Designed with system deployment in mind, the A5M20TG042 delivers. Our MPM provides features that include:
- A 50-ohm input/output match, eliminating the need for external matching networks
- A compact 20 mm × 16 mm land grid array (LGA) package, compatible with standard surface-mount technology (SMT)
processes
- Dual-band operation and up to 395 MHz instantaneous bandwidth, enabling support for multiple bands (B1, B3, B25
and
B66)
with a single module
- Reduction of bill of materials (BOM) complexity allowing for multiband radio units (RUs) with fewer discrete
components
| 3-stage module solution (2-stage LDMOS IC + GaN Doherty Amplifier)
|
Embedded copper (Cu) coin with better thermal management for efficiency improvement
- 47 dB line-up gain with 42% line-up efficiency
|
| Designed for 10 W applications at the antenna |
Compact requires less power amplifier (PA) real estate |
| Up to 395 MHz instantaneous bandwidth and dual band operation |
Compatible LGA package for place and reflow |
A5M20TG042 reference circuit showing complete layout of NXP’s mid power module and
other components.
Want More Information? Access Our Website.
The A5M20TG042 is available now to order and to sample through our
exclusive sample program. Please visit NXP.com to
download the data sheet, explore the reference design, and learn
how this module can accelerate your next wireless
deployment.
| A5M20TG042 |
1800-2200 MHz |
32T32R mMIMO systems for bands B1-B3/B25-B66 |
FDD MIMO; Macro driver |
Contact your local distribution partner |
