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Watch this video about our new MRF24G300HS product that is the first RF power transistor designed for RF energy using GaN-on-SiC. The MRF24G300HS exceeds the efficiency of most vacuum tubes at 2.45 GHz, while the high thermal conductivity of SiC enables CW and long pulse operations. NXP has also developed reference circuits for developing solid-state RF energy applications.
For more information, visit www.nxp.com/MRF24G300HS.