3-Phase Reference Design for VE-Trac Drive SiC Module Featuring GD3160

RDGD31603PHSEVM

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Product Details

Block Diagram

GD3160 Block Diagram

GD3160 Block Diagram

Supported Devices

Processors and Microcontrollers

Ultra-Reliable MPC57xx MCUs

Power Management

Powertrain and Engine Control

Safety SBCs

Interfaces

3.3 V / 5 V IO CAN Transceivers

Features

Gate Driver

  • Integrated Galvanic signal isolation (up to 8 kV)
  • High gate current integrated: 15 A source/sink capable
  • SPI interface for safety monitoring, configuration, and diagnostic reporting
  • Fail-safe state management from LV and HV domain for user-selectable safe state
  • Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
  • Configurable desaturation and current sense optimized for protecting SiC and IGBTs
  • Integrated soft shutdown, two-level turn-off, optimized for unique gate drive requirements of SiC
  • Integrated ADC for monitoring parameters from HV domain
  • CMTI > 100 V/ns
  • Available in 5.0 or 3.3 V logic interface variants
  • Certified compliant with ISO 26262, supporting ASIL D level functional safety

GD3160

  • Advanced single channel gate driver for IGBT and SiC MOSFETs. Integrated galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

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  • RDGD31603PHSEVM

  • 3-Phase Reference Design for VE-Trac Drive SiC Module Featuring GD3160.

    • Availability: In stock
    • Inventory: 8
    • Shipping: Normally ships 1-2 business days
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Documentation

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2 documents

Design Resources

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Design Files

2 design files

Software

2 software files

Note: For better experience, software downloads are recommended on desktop.

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