575-960 MHz, 2 W Avg., 48 V Airfast®Wideband Integrated RF LDMOS Amplifier

A2I09VD015N

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Product Details

Features

  • On-chip matching (50 ohm input, DC blocked)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    575
  • Frequency (Max) (MHz)
    960
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    42.7
  • Peak Power (Typ) (W)
    18.5
  • Die Technology
    LDMOS

RF Performance Table

900 MHz

Typical Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQ1(A+B) = 16 mA, IDQ2(A+B) = 84 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)1. All data measured in fixture with device soldered to heatsink.

Documentation

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1 documents

Design Resources

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Design Files

2 design files

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