Design Files
Receive the full breakdown. See the product footprint and more in the eCad file.
1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs
- This page contains information on a product that is not recommended for new designs.
The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices, designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital), and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization between 1.8 and 600 MHz.
NI-780H-4L, NI-780S-4L Package Image
Product Details
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- NI-780H-4L in Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
- NI-780S-4L in Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13-inch Reel.
RF Performance Table
130, 230 MHz Broadband
Typical Performance: VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (100 µsec, 20% Duty Cycle) |
300 Peak | 230 | 26.5 | 74.0 | –16 |
| CW | 300 Avg. | 130 | 25.0 | 80.0 | –15 |
- Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles
- 300 W CW Output Power
- 300 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
- Capable of 300 W CW Operation
Buy/Parametrics
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Documentation
Quick reference to our documentation types.
5 documents
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Technical Notes
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
NI-780S-4L
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Package Information
98ASA10793D, NI-780H-4L
