MMRF1310H: 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs

Overview

Features

NI-780H-4L, NI-780S-4L Package Image

NI-780H-4L, NI-780S-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    300.0 @ CW
  • Test Signal
    1-TONE
  • Power Gain (Typ) (dB) @ f (MHz)
    25.0 @ 130.0
  • Efficiency (Typ) (%)
    80
  • Thermal Resistance (Spec) (°C/W)
    0.19
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

130, 230 MHz Broadband

Typical Performance: VDD = 50 Vdc, IDQ = 100 mA
Signal Type Pout
(W)
f
(MHz)
Gps
(dB)
ηD
(%)
IRL
(dB)
Pulse (100 µsec,
20% Duty Cycle)
300 Peak23026.574.0–16
CW300 Avg.13025.080.0–15
  • Capable of Handling a Load Mismatch of 65:1 VSWR @ 50 Vdc, 230 MHz, at all Phase Angles
    • 300 W CW Output Power
    • 300 W Pulse Peak Power, 20% Duty Cycle, 100 µsec
  • Capable of 300 W CW Operation