NXP AFV10700H Highest Power Density RF LDMOS Transistor

  • Posted Date: 26 June 2017

http://www.nxp.com/AFV10700H. See NXP’s prowess with the industry’s highest power density in LDMOS technology with a compact 750 W 1.3 x 2.55 inch reference circuit for L-band. Watch Gavin Smith in this video explain how our transistors deliver highest RF output power for automatic dependent surveillance – broadcast (ADS-B), identification friend-or-foe (IFF), and distance measuring equipment (DME) systems.