Design Files
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design files types.
1 design file
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Models
S-parameters BFU660F
NPN Wideband Silicon RF Transistor
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
sot343f_3d
Product Details
Features
- 40 GHz fT silicon technology
- High output third-order intercept point 27 dBm at 1.8 GHz
- Low noise high linearity RF transistor
Target Applications
- Analog/digital cordless applications
- LTE, cellular, UMTS
- SDARS second stage LNA
- X-band high output buffer amplifier
- ZigBee
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Documentation
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4 documents
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Data Sheet
NPN wideband silicon RF transistor
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Package Information
Plastic surface-mounted flat pack package; 4 leads