GD3100: Advanced single-channel gate driver for Insulated Gate Bipolar Transistors (IGBTs/SiC)

Overview

Features

Features

GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram

GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram

GD3100 Product Image

GD3100 Product Image

Inverter Platform live demonstration

Inverter Platform live demonstration thumbnail

Getting started with FRDMGD3100HBIEVM board

Getting started with FRDMGD3100HBIEVM board thumbnail

Using SPIGen with the GD3100 Gate Driver

Using SPIGen with the GD3100 Gate Driver thumbnail

Key Parametrics

  • Device Function
    HV Isolated IGBT & SiC Single gate driver IC
  • Load Current (IL) [TYP] (A)
    15
  • Number of Channels
    1
  • Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))
    500
  • Load Supply Voltage (Min) (V)
    -12
  • Load Supply Voltage (Max) (V)
    25
  • Supply voltage [min] (V)
    6, 5
  • Supply voltage [max] (V)
    40
  • Interface and Input Control
    PWM / PWM, SPI / SPI
  • Ambient Operating Temperature (Min to Max) (℃)
    -40 to 125
.

Complementary products for your application

GD3100 Reference Designs

EV Power Inverter Control Reference Platform – NXP’s EV Power Inverter Reference Platform targeting ISO 26262 ASIL D enables high-voltage power inverter control to drive electric vehicle traction motors and dc to dc converters.

3-Phase Reference Design for HybridPACKTM Drive IGBT/SiC Module featuring GD3100 – The RDGD3100I3PH5EVB is a fully functional three-phase Power Gate Drive reference design populated with six GD3100 gate drivers with fault management and supporting control circuitry.

3-Phase Reference Design for Fuji M653 IGBTs featuring GD3100 – RDGD3100F3PH5EVB is a power inverter reference design featuring the GD3100 advanced IGBT gate driver for high voltage 3-phase EV motor control.

What's New

Pressure sensors, TPMS, MEMS, automotive and industrial market
News

How advanced IGBT gate drivers simplify high-voltage, high-current inverters

IGBTs have nuanced operations associated with high current densities and temperature that force IGBT gate drivers to incorporate sophisticated features.