GD3000: 3-Phase Brushless Motor Pre-Driver

Overview

The GD3000 is a gate driver IC for three-phase motor drive applications providing three half-bridge drivers, each capable of driving two N-channel MOSFETs.

Supports 1A to 2.5A peak current capability
Can operate off of a single power supply with a wide range from 6V to 60V with 75V transient protection
Uses a bootstrap gate driver architecture with trickle charge circuitry to support 100% duty cycle
Uses programmable cross-talk protection when the high-side or low-side MOSFET is switching to prevent flow of current
Integrated VDS sensing of the high-side and low-side MOSFETs is used to protect the external power stage against over-current conditions
Includes a current shunt amplifier for accurate current measurement for phase error detection

The IC interfaces to a MCU via six direct input control signals, a SPI port for device setup and asynchronous reset, enable and interrupt signals. Both 5.0 and 3.0 V logic level inputs are accepted and 5.0 V logic level outputs are provided.

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Features

MC33GD3000 Features

Fully specified from 8.0 to 40 V covers 12 and 24 V automotive systems
Extended operating range from 6.0 to 60V covers 12 and 42 V systems
Greater than 1.0 A gate drive capability with protection
Protection against reverse charge injection from CGD and CGS of external FETs
Includes a charge pump to support full FET drive at low battery voltages
Deadtime is programmable via the SPI port
Simultaneous output capability enabled via safe SPI command
Temperature: -40 to +125

MC34GD3000 Features

Xtended supply voltage operating range: 6.0 to 60V
Wide dead time range (50 ns to 12 μs) programmable via the SPI port
External FET gate drive capability of >1.0 A with protection
Charge pump ensures sufficient external FET drive at low supply voltages
Device protection against reverse charge-injection from CGD and CGS of external FETS
Integrated overcurrent, desaturation, and phase fault-detection
Immunity against positive or negative transient voltage spikes on the gate driver
Current shoot-through protection built into dead time control
Supports direct 3.3 V and 5.0 V logic interface to MCUs
Integrated current sensing amplifier
Device configuration and diagnostics through the SPI
Temperature: -20 to +105

MoreLess

Features

MC33GD3000 Features

Fully specified from 8.0 to 40 V covers 12 and 24 V automotive systems
Extended operating range from 6.0 to 60V covers 12 and 42 V systems
Greater than 1.0 A gate drive capability with protection
Protection against reverse charge injection from CGD and CGS of external FETs
Includes a charge pump to support full FET drive at low battery voltages
Deadtime is programmable via the SPI port
Simultaneous output capability enabled via safe SPI command
Temperature: -40 to +125

MC34GD3000 Features

Xtended supply voltage operating range: 6.0 to 60V
Wide dead time range (50 ns to 12 μs) programmable via the SPI port
External FET gate drive capability of >1.0 A with protection
Charge pump ensures sufficient external FET drive at low supply voltages
Device protection against reverse charge-injection from CGD and CGS of external FETS
Integrated overcurrent, desaturation, and phase fault-detection
Immunity against positive or negative transient voltage spikes on the gate driver
Current shoot-through protection built into dead time control
Supports direct 3.3 V and 5.0 V logic interface to MCUs
Integrated current sensing amplifier
Device configuration and diagnostics through the SPI
Temperature: -20 to +105