A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V

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The A3G23H500W17S 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Data Sheet

Application Notes

Product Details

Features

High terminal impedances for optimal broadband performance
Advanced high performance in-package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 48 Vdc, I_DQA = 300 mA, V_GSB = -5.0 Vdc, P_out = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2300 MHz	14.5	53.7	8.4	-30.5
2350 MHz	14.6	52.8	8.3	-30.6
2400 MHz	14.2	53.2	8.1	-31.9

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Documentation

Quick reference to our documentation types.

3 documents

Data Sheet
A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

PDFRev 1May 3, 2021367.4 KBA3G23H500W17SEnglish
Application Note
Thermal Characterization Methodology of RF Power Amplifiers - Application Note

PDFRev 2Jul 11, 2024235.5 KBAN1955English
Application Note
AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

PDFRev 1Feb 24, 2011664.6 KBAN1908English

Design Resources

Design Files

Quick reference to our design files types.

5 design files

Receive the full breakdown. See the product footprint and more in the eCad file.

Models
A3G23H500W17S Carrier Class AB S-Parameters

S2PRev 0Apr 23, 2021 12:07:0026.1 KBA3G23H500W17S-Carrier-Class-AB

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Models
A3G23H500W17S Peaking Class AB S-Parameters

S2PRev 0Apr 23, 2021 12:07:0026.1 KBA3G23H500W17S-Peaking-Class-AB

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Models
A3G23H500W17S Peaking Class C S-Parameters

S2PRev 0Apr 23, 2021 12:07:0026.1 KBA3G23H500W17S-Peaking-Class-C

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Printed Circuit Boards and Schematics
A3G23H500W17S 2600 MHz PCB DXF file

ZIPRev 1Apr 23, 2021 11:44:0026.4 KBA3G23H500W17S-2300-PCB

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Design Files - miscellaneous
A3G23H500W17S 2300-2400 MHz Design Files

ZIPRev 0Nov 18, 2021 16:00:00668.7 KBA3G23H500W17S-2300-2400-MHZ

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2300-2400 MHz, 80 W Avg., 48 V Airfast^® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Design Resources

Design Files

Filter by

A3G23H500W17S Carrier Class AB S-Parameters

A3G23H500W17S Peaking Class AB S-Parameters

A3G23H500W17S Peaking Class C S-Parameters

A3G23H500W17S 2600 MHz PCB DXF file

A3G23H500W17S 2300-2400 MHz Design Files

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2300-2400 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

Product Details

Features

RF Performance Table

2300 MHz

Buy/Parametrics

Documentation

Filter by

A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet

Thermal Characterization Methodology of RF Power Amplifiers - Application Note

AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

Design Resources

Design Files

Filter by

A3G23H500W17S Carrier Class AB S-Parameters

A3G23H500W17S Peaking Class AB S-Parameters

A3G23H500W17S Peaking Class C S-Parameters

A3G23H500W17S 2600 MHz PCB DXF file

A3G23H500W17S 2300-2400 MHz Design Files

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Support

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2300-2400 MHz, 80 W Avg., 48 V Airfast^® RF Power GaN Transistor