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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
The A3G26H501W17S 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Select a section:
Frequency | Gps (dB) |
ηD (%) |
P3dB (dBm) (2) |
ACPR (dBc) |
2496 MHz | 14.0 | 46.3 | 56.6 | –35.4 |
2590 MHz | 14.5 | 45.1 | 57.1 | –36.6 |
2690 MHz | 14.4 | 47.4 | 56.0 | –33.2 |
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