Documentation
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4 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
A3G26H501W17S 2496-2690 MHz, 56 W Avg., 48 V Airfast® RF Power GaN Transistor
A3G26H501W17S Receive alerts
The A3G26H501W17S 56 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4S2S Package Image
Product Details
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 2496
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- Frequency (Max) (MHz)
- 2690
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 57
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- Peak Power (Typ) (W)
- 500
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- Die Technology
- GaN
RF Performance Table
2600 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)| Frequency | Gps (dB) |
ηD (%) |
P3dB (dBm) (2) |
ACPR (dBc) |
| 2496 MHz | 14.0 | 46.3 | 56.6 | –35.4 |
| 2590 MHz | 14.5 | 45.1 | 57.1 | –36.6 |
| 2690 MHz | 14.4 | 47.4 | 56.0 | –33.2 |
2. Data measured at pulsed CW, 10 µsec(on), 10% duty cycle.
Design Resources
Design Files
4 design files
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Models
A3G26H501W17S Carrier S-Parameters
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Models
A3G26H501W17S Peaking Class AB S-Parameters
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Models
A3G26H501W17S Peaking Class C S-Parameters
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Printed Circuit Boards and Schematics
A3G26H501W17S 2600 MHz PCB DXF file