A3G26H501W17S 2496-2690 MHz, 56 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G26H501W17S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    57
  • Peak Power (Typ) (W)
    500
  • Die Technology
    GaN

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 350 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
P3dB
(dBm) (2)
ACPR
(dBc)
2496 MHz14.046.356.6–35.4
2590 MHz14.545.157.1–36.6
2690 MHz14.447.456.0–33.2
1. All data measured in fixture with device soldered to heatsink.
2. Data measured at pulsed CW, 10 µsec(on), 10% duty cycle.

Documentation

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4 documents

Design Resources

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Design Files

4 design files

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