2496-2690 MHz, 34 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G26H200W17S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    52.5
  • Peak Power (Typ) (W)
    178
  • Die Technology
    GaN

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 120 mA, VGSB = –5.3 Vdc, Pout = 34 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
 
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz14.754.28.1–29.3
2590 MHz14.855.57.9–30.9
2690 MHz14.254.07.8–34.1

Design Resources

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Documentation

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3 documents

Design Files

4 design files

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