Design Files
3 design files
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Models
A5G35H110N Peaking Class AB S-Parameters
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Models
A5G35H110N Carrier S-Parameters
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Models
A5G35H110N Peaking Class C S-Parameters
3300-3700 MHz, 15.1 W Avg., 48 V Airfast® RF Power GaN Amplifier
A5G35H110N Receive alerts
This 15.1 W asymmetrical Doherty RF power GaN amplifier is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3300 to 3700 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3300 to 3700 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
Part numbers include: A5G35H110N, A5G35H110N-3400.
RF Performance Table
3500 MHz
Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 70 mA, VGSB = –4.1 Vdc, Pout = 15.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3300 MHz | 14.8 | 57.6 | 7.5 | -27.9 |
| 3400 MHz | 15.4 | 55.7 | 7.8 | -29.3 |
| 3500 MHz | 15.8 | 54.0 | 8.0 | -30.8 |
| 3600 MHz | 15.8 | 54.3 | 7.8 | -31.1 |
| 3700 MHz | 14.9 | 54.3 | 7.4 | -31.0 |
Documentation
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