3700-3980 MHz, 7.6 W Avg., 48 V Airfast® RF Power GaN Transistor


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  • High terminal impedances for optimal broadband performance
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for low complexity linearization systems
  • Optimized for massive MIMO active antenna systems for 5G base stations
  • RoHS compliant

Part numbers include: A5G38H055N.

RF Performance Table

3700–3980 MHz

Typical Doherty Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 45 mA, VGSB = –3.9 Vdc, Pout = 7.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)1. All data measured in reference circuit with device soldered to printed circuit board


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3 design files


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