Design Files
3 design files
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Models
A5G35H055N Peaking Class C S-Parameters
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Models
A5G35H055N Carrier S-Parameters
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Models
A5G35H055N Peaking Class AB S-Parameters
3400-3600 MHz, 7.6 W Avg., 48 V Airfast® RF Power GaN Transistor
A5G35H055N Receive alerts
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Product Details
Features
- High terminal impedances for optimal broadband performance
- Improved linearized error vector magnitude with next generation signal
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for low complexity digital linearization systems
- Optimized for massive MIMO active antenna systems for 5G base stations
- RoHS compliant
RF Performance Table
3500 MHz
Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQA = 35 mA, VGSB = –4.6 Vdc, Pout = 7.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 3400 MHz | 15.6 | 58.2 | 8.0 | -28.5 |
| 3500 MHz | 15.5 | 58.0 | 8.4 | -31.9 |
| 3600 MHz | 15.4 | 56.8 | 8.1 | -34.4 |