Design Files
3 design files
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Models
A5G35H055N Peaking Class C S-Parameters
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Models
A5G35H055N Carrier S-Parameters
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Models
A5G35H055N Peaking Class AB S-Parameters
This 7.6 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600 MHz.
This part is characterized and performance is guaranteed for applications operating in the 3400 to 3600 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
Select a section:
Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
3400 MHz | 15.6 | 58.2 | 8.0 | -28.5 |
3500 MHz | 15.5 | 58.0 | 8.4 | -31.9 |
3600 MHz | 15.4 | 56.8 | 8.1 | -34.4 |
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