A2V09H400-04S 720-960 MHz, 102 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V09H400-04S Active

This 102 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 720 to 960 MHz.

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate--source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

900 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 750 mA, VGSB = 0.8 Vdc, Pout = 102 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
920 MHz 18.7 53.5 7.2 –29.5
940 MHz 18.9 54.0 7.0 –29.2
960 MHz 18.5 53.4 6.8 –28.8

700 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 46 Vdc, IDQA = 300 mA, VGSB = 2.3 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 P3dB
(dBm)		 ACPR
(dBc)
758 MHz18.356.17.957.4–29.7
780 MHz18.755.88.057.5–31.0
803 MHz18.855.58.057.5–33.0

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N true 0 PSPA2V09H400-04Sen 3 Application Note Application Note t789 1 Data Sheet Data Sheet t520 1 Package Information Package Information t790 1 en_US en_US en Data Sheet Data Sheet 1 1 2 English A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1569111075146708476299 PSP 221.0 KB None None documents None 1569111075146708476299 /docs/en/data-sheet/A2V09H400-04S.pdf 221032 /docs/en/data-sheet/A2V09H400-04S.pdf A2V09H400-04S documents N N 2019-09-21 A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V09H400-04S.pdf /docs/en/data-sheet/A2V09H400-04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Feb 18, 2021 980000996212993340 Data Sheet Y N A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet Application Note Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages Package Information Package Information 1 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A2V09H400-04S downloads en true 1 Y PSP Y Y Application Note 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 Data Sheet 1 /docs/en/data-sheet/A2V09H400-04S.pdf 2019-09-21 1569111075146708476299 PSP 1 Feb 18, 2021 Data Sheet A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A2V09H400-04S.pdf English documents 221032 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A2V09H400-04S.pdf A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet /docs/en/data-sheet/A2V09H400-04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N A2V09H400-04S 720-960 MHz, 102 W Avg, 48 V Data Sheet 221.0 KB A2V09H400-04S N 1569111075146708476299 Package Information 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 true Y Products

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