Advanced High Voltage Isolated Gate Driver with Segmented Drive for SiC MOSFETs

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Block Diagram

Advanced High Voltage Isolated GD with Segmented Drive for SiC MOSFETs

GD3160 Block Diagram


Key Features

  • HV isolated IGBT and SiC single gate driver IC device functions
  • Load current(IL) 15 A (Typ)
  • Single channel
  • Drain-to-source on resistance 500 mOhm RDS(ON) (Typ)
  • Load supply voltage min. -12 V, max. 25 V
  • Supply voltage min. 4.5 V, max. 40 V
  • Ambient operating temperature -40 to 125 °C
  • PWM and SPI interface and input controllers


  • ±15 A split output gate current drive
  • Programmable HV VCC regulator output: 14 V to 21 V, 1 V step
  • Max VCC output voltage: 23 V


  • Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
  • Faster VCE DeSat detection and reaction time: < 1.2 µs (SiC)
  • Improved PWM deadtime range for reduced switching losses (SiC)
  • Programmable two-level turn off (2LTO) and soft-shutdown (SSD)

Functional Safety

  • Additional programmable fault pin (INTA)
  • Integrated HV fault management (FSISO)
  • Programmable VCE output monitoring

Insulation / Isolation

  • Minimum common mode transient immunity (CMTI) > 100 V/ns
  • 5,000 Vrms galvanic isolation per UL1577 (planned)

Product Longevity Program

  • This product is included in the NXP Product Longevity Program ensuring a stable supply of products for your embedded designs. The GD3160 is included in the 15-year program.

Part numbers include: MGD3160AM315EK, MGD3160AM335EK, MGD3160AM515EK, MGD3160AM535EK.


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