Advanced High Voltage Isolated Gate Driver for IGBT and SiC MOSFETs

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Block Diagram

Advanced High Voltage Isolated Gate Driver for IGBT and SiC MOSFETs

GD3100, Advanced IGBT/SiC Gate Driver - Block Diagram


Key Features

  • HV isolated IGBT and SiC single gate driver IC device functions
  • Load current 15 A (IL)
  • Single channel
  • Drain-to-source on resistance 500 mOhm RDS(ON)
  • Load supply voltage min. -12 V, max. 25 V
  • Supply voltage min. 5.6 V, max. 40 V
  • Amient operating temperature -40 to 125 °C
  • PWM and SPI interface and input controllers

High Level of Integration and Flexibility for Any IGBT/SiC Module

  • Galvanic signal isolation
  • 10 A on/off power stage
  • Active Miller Clamp
  • 3.3 or 5.0 V I/O
  • Compatible with 200 to 1700 V IGBTs/SiC
  • SPI for programmability and diagnostics
  • Reduces BOM costs and PCB size

Fast Overcurrent or Short Circuit Protection

  • Both I-sense or DESAT sense available
  • Two-level turn-off
  • Soft shutdown

Compliant with ISO26262 ASIL C/D Functional Safety Requirements (Certification Pending)

  • VGE monitoring to verify communication between PWM input and Gate output
  • Fail-safe pins allowing redundant gate control
  • Secure SPI settings with Cycle Redundancy Check (CRC)
  • Enforced deadtime protection
  • Built-In Self-Test (BIST) for analog and digital circuits

Part numbers include: MC33GD3100A3EK, MC33GD3100B3EK, MC33GD3100BEK, MC33GD3100EK, MGD3100AM38EK, MGD3100AM58EK, MGD3100BM58EK, MGD3100BM38EK.


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