Advanced Single-Channel High-Voltage Isolated Automotive Gate Driver for SiC MOSFETs/IGBTs

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Product Details

Block Diagram

GD3160 Block Diagram

GD3160 Block Diagram

Features

Operation

  • ±15 A split output gate current drive
  • Programmable HV VCC regulator output: 14 V to 21 V, 1 V step
  • Max VCC output voltage: 23 V

Protection

  • Integrated HV temperature sensing (TSENSE) for NTC thermistor or diode sensors with programmable offset and gain
  • Faster VCE DeSat detection and reaction time: < 1.2 µs (SiC)
  • Improved PWM deadtime range for reduced switching losses (SiC)
  • Programmable two-level turn off (2LTO) and soft-shutdown (SSD)

Functional Safety

  • Additional programmable fault pin (INTA)
  • Integrated HV fault management (FSISO)
  • Programmable VCE output monitoring

Insulation/Isolation

  • Minimum common mode transient immunity (CMTI) > 100 V/ns
  • 5,000 Vrms galvanic isolation per UL1577 (planned)

Key Parametrics

  • Device Function
    HV Isolated IGBT & SiC Single gate driver IC
  • Load Current (IL) [TYP] (A)
    15
  • Number of Channels
    1
  • Drain-to-Source On Resistance (Typ) (mOhm) (RDS(ON))
    500
  • Load Supply Voltage (Min) (V)
    -12
  • Load Supply Voltage (Max) (V)
    25
  • Supply Voltage [min] (V)
    4.5, 4.75
  • Supply Voltage [max] (V)
    40
  • Interface and Input Control
    SPI / PWM
  • Ambient Operating Temperature (Min to Max) (℃)
    -40 to 125

Design Resources

Documentation

Quick reference to our documentation types.

4 documents

Hardware

1-5 of 11 hardware offerings

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Software

3 software files

Note: For better experience, software downloads are recommended on desktop.

Engineering Services

1 engineering service

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