1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T18H455W23S

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    1880
  • Supply Voltage (Typ) (V)
    30
  • Peak Power (Typ) (dBm)
    58.4
  • Peak Power (Typ) (W)
    685
  • Die Technology
    LDMOS

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 29.5 Vdc, IDQA = 590 mA, VGSB = 0.78 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1805 MHz17.253.58.0–28.3
1840 MHz17.454.18.1–29.4
1880 MHz17.153.77.9–31.2

Design Resources

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Documentation

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5 documents

Design Files

5 design files

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