Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00974D, ACP-1230S-4L2S
1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor
A3T18H455W23S Receive alerts
The A3T18H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.
ACP-1230S-4L2S Package Image
Product Details
Features
- Advanced high performance in-package Doherty
- Designed for wide instantaneous bandwidth applications
- Greater negative gate-source voltage range for improved Class C operation
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for digital predistortion error correction systems
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 1805
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- Frequency (Max) (MHz)
- 1880
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- Supply Voltage (Typ) (V)
- 30
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- Peak Power (Typ) (dBm)
- 58.4
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- Peak Power (Typ) (W)
- 685
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- Die Technology
- LDMOS
RF Performance Table
1800 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 29.5 Vdc, IDQA = 590 mA, VGSB = 0.78 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 17.2 | 53.5 | 8.0 | –28.3 |
| 1840 MHz | 17.4 | 54.1 | 8.1 | –29.4 |
| 1880 MHz | 17.1 | 53.7 | 7.9 | –31.2 |
Design Resources
Design Files
5 design files
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Models
A3T18H455W23S Peaking Class C S-Parameters
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Models
A3T18H455W23S Carrier S-Parameters
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Models
A3T18H455W23S Peaking Class AB S-Parameters
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Printed Circuit Boards and Schematics
A3T18H455W23S 1800 MHz PCB DXF file
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Calculators
A3T18H455W23S RF Power Electromigration MTTF Calculation Program