1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T18H455W23S
The A3T18H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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Product Details

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Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 29.5 Vdc, IDQA = 590 mA, VGSB = 0.78 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz17.253.58.0–28.3
1840 MHz17.454.18.1–29.4
1880 MHz17.153.77.9–31.2

Documentation

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5 documents

Design Resources

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Design Files

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5 design files

  • Models

    A3T18H455W23S Peaking Class C S-Parameters

    S2PRev 0Sep 1, 2017 00:00:00136.5 KBA3T18H455W23S-Peaking-Class-C
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  • Models

    A3T18H455W23S Carrier S-Parameters

    S2PRev 0Sep 1, 2017 00:00:00136.4 KBA3T18H455W23S-Carrier
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  • Models

    A3T18H455W23S Peaking Class AB S-Parameters

    S2PRev 0Sep 1, 2017 00:00:00136.4 KBA3T18H455W23S-Peaking-Class-AB
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  • Printed Circuit Boards and Schematics

    A3T18H455W23S 1800 MHz PCB DXF file

    ZIPRev 2Sep 1, 2017 00:00:0058.1 KBA3T18H455W23S-1800-PCB
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  • Calculators

    A3T18H455W23S RF Power Electromigration MTTF Calculation Program

    XLSXRev 0Sep 5, 2017 00:00:0081.3 KBA3T18H455W23S_MTTF_CALC
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