Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00974D, ACP-1230S-4L2S
2110-2200 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor
A3T21H456W23S Receive alerts
The A3T21H456W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.
ACP-1230S-4L2S Package Image
Product Details
Features
- Advanced high performance in-package Doherty
- Designed for wide instantaneous bandwidth applications
- Greater negative gate-source voltage range for improved Class C operation
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for digital predistortion error correction systems
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 2110
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- Frequency (Max) (MHz)
- 2200
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- Supply Voltage (Typ) (V)
- 30
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- Peak Power (Typ) (dBm)
- 57.5
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- Peak Power (Typ) (W)
- 562
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- Die Technology
- LDMOS
RF Performance Table
2100 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 30 Vdc, IDQA = 800 mA, VGSB = 0.35 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 14.8 | 49.5 | 8.0 | –30.3 |
| 2140 MHz | 15.3 | 48.9 | 8.0 | –31.1 |
| 2170 MHz | 15.5 | 48.6 | 7.8 | –31.3 |
| 2200 MHz | 15.5 | 47.9 | 7.7 | –32.0 |
Design Resources
Design Files
4 design files
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Models
A3T21H456W23S Peaking Class C S-Parameters
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Models
A3T21H456W23S Peaking Class AB S-Parameters
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Models
A3T21H456W23S Carrier S-Parameters
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Printed Circuit Boards and Schematics
A3T21H456W23S 2100 MHz PCB DXF file