Documentation
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3 documents
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Package Information
NI-780S-4L
1805-2200 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor
A3G18H500-04S Receive alerts
The A3G18H500-04S 107 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1805 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L Package Image
Product Details
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Able to withstand extremely high output VSWR and broadband operating conditions
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 1805
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- Frequency (Max) (MHz)
- 2200
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 57.3
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- Peak Power (Typ) (W)
- 537
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- Die Technology
- GaN
RF Performance Table
1800 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 15.3 | 58.4 | 7.1 | –31.9 |
| 1840 MHz | 15.4 | 57.7 | 7.0 | –33.2 |
| 1880 MHz | 15.4 | 57.7 | 6.7 | –33.8 |
Design Resources
Design Files
4 design files
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Models
A3G18H500-04S S-Parameters Carrier
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Models
A3G18H500-04S S-Parameters Peaking Class AB
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Models
A3G18H500-04S S-Parameters Peaking Class C
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Printed Circuit Boards and Schematics
A3G18H500-04S 1800 MHz PCB DXF file