1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T19H455W23S
The A3T19H455W23S 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990 MHz.

See product image

Product Details

Select a section:

Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

1990 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 30 Vdc, IDQA = 540 mA, VGSB = 0.6 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1930 MHz16.249.68.1–31.0
1960 MHz16.549.48.0–32.1
1990 MHz16.449.17.8–32.6

Documentation

Quick reference to our documentation types.

Filters

5 documents

Design Resources

Select a section:

Design Files

Filters

4 design files

Support

What do you need help with?

  • Narrow your search
Search