Documentation
Quick reference to our documentation types.
5 documents
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Engineering Bulletin
Using Data Sheet Impedances for RF LDMOS Devices
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Package Information
98ASA00974D, ACP-1230S-4L2S
1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor
A3T19H455W23S Receive alerts
The A3T19H455W23S 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990 MHz.
ACP-1230S-4L2S Package Image
Product Details
Features
- Advanced high performance in-package Doherty
- Designed for wide instantaneous bandwidth applications
- Greater negative gate-source voltage range for improved Class C operation
- Able to withstand extremely high output VSWR and broadband operating conditions
- Designed for digital predistortion error correction systems
- RoHS compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 1930
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- Frequency (Max) (MHz)
- 1990
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- Supply Voltage (Typ) (V)
- 30
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- Peak Power (Typ) (dBm)
- 57.3
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- Peak Power (Typ) (W)
- 541
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- Die Technology
- LDMOS
RF Performance Table
1990 MHz
Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 30 Vdc, IDQA = 540 mA, VGSB = 0.6 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1930 MHz | 16.2 | 49.6 | 8.1 | –31.0 |
| 1960 MHz | 16.5 | 49.4 | 8.0 | –32.1 |
| 1990 MHz | 16.4 | 49.1 | 7.8 | –32.6 |
Design Resources
Design Files
4 design files
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Models
A3T19H455W23S Peaking Class AB S-Parameters
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Models
A3T19H455W23S Carrier S-Parameters
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Models
A3T19H455W23S Peaking Class C S-Parameters
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Printed Circuit Boards and Schematics
A3T19H455W23S 1900 MHz PCB DXF file