1930-1990 MHz, 81 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T19H455W23S
The A3T19H455W23S 81 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1990 MHz.

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Product Details

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Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1930
  • Frequency (Max) (MHz)
    1990
  • Supply Voltage (Typ) (V)
    30
  • Peak Power (Typ) (dBm)
    57.3
  • Peak Power (Typ) (W)
    541
  • Die Technology
    LDMOS

RF Performance Table

1990 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 30 Vdc, IDQA = 540 mA, VGSB = 0.6 Vdc, Pout = 81 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1930 MHz16.249.68.1–31.0
1960 MHz16.549.48.0–32.1
1990 MHz16.449.17.8–32.6

Documentation

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5 documents

Design Resources

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Design Files

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4 design files

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