BGU8H1 LTE LNA evaluation board

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Product Details

Supported Devices

RF

LNAs for LTE

Features

  • The BGU8H1 is optimized for 2300 MHz to 2690 MHz
  • Noise figure (NF) = 1.0 dB
  • Gain = 13 dB
  • High input 1 dB compression point of -1 dBm
  • High out of band IP3i of 8 dBm
  • Requires only one input matching inductor and one supply decoupling capacitor
  • Input and output DC decoupled
  • Integrated matching for the output

Power Management

  • Supply voltage 1.5 V to 3.1 V
  • Optimized performance at low supply current of 5 mA
  • Power-down mode current consumption < 1 µA
  • ESD protection on all pins (HBM > 2 kV)
  • 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology

Buy Options

  • OM7886

  • BGU8H1 LTE LNA evaluation board.

  • $160.00 USD
  • For a quantity of 1

Design Resources

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Documentation

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1 documents

Design Files

1 design file

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