1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX1K80H

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The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

The MRFX1K80H is pin-compatible (same PCB) with its plastic version MRFX1K80N, with MRFE6VP61K25H and MRFE6VP61K25N (1250 W @ 50 V), and with MRF1K50H and MRF1K50N (1500 W @ 50 V).

Product Details

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Features

  • Based on new 65 V LDMOS technology, designed for ease of use
  • Characterized from 30 to 65 V for extended power range
  • Unmatched input and output
  • High breakdown voltage for enhanced reliability and higher efficiency architectures
  • High drain-source avalanche energy absorption capability
  • High ruggedness. Handles 65:1 VSWR.
  • RoHS compliant
  • Lower thermal resistance option in over-molded plastic package: MRFX1K80N
  • Included in our product longevity program with assured supply for a minimum of 15 years after launch
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    400
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (Typ) (W)
    1800
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    25.1 @ 230
  • Efficiency (Typ) (%)
    75.1
  • Thermal Resistance (Spec) (℃/W)
    0.09
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

Frequency
(MHz)		 Signal Type VDD
(V)		 Pout
(W)		 Gps
(dB)		 ηD
(%)		 Reference Circuit
Part Number
27 CW 65 1800 CW 27.8 75.6 MRFX1K80H-27MHZ
64 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 27.1 69.5 MRFX1K80H-64MHZ
81.36 CW 62 1800 CW 25.1 78.7 MRFX1K80H-81MHZ
87.5-108 CW 60 1600 CW 23.6 82.5 MRFX1K80H-88MHZ
123/128 Pulse (100 µsec, 10% Duty Cycle) 65 1800 Peak 25.9 69.0 MRFX1K80H-128MHZ
175 CW 60 1560 CW 23.5 75.9 MRFX1K80H-175MHZ
174-230 DohertyDVB-T (8k OFDM) 63 250 Avg. 21.3 43.3 MRFX1K80H-VHFDHY
230Pulse (100 µsec, 20% Duty Cycle) 65 1800 Peak 25.1 75.1 MRFX1K80H-230MHZ

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test Voltage Result
230 Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles 14 W Peak
(3 dB Overdrive)		 65 No Device Degradation

Design Resources

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Documentation

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Design Files

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